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BS62LV4006 -    Very Low Power/Voltage CMOS SRAM 512K X 8 bit Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) Asynchronous 4M(512Kx8) bits Static RAM

BS62LV4006_199155.PDF Datasheet

 
Part No. BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006PI BS62LV4006PI-55 BS62LV4006PIG70 BS62LV4006STCG70 BS62LV4006STIG70 BS62LV4006TIP70 BS62LV4006EC BS62LV4006EC-55 BS62LV4006ECG55 BS62LV4006ECG70 BS62LV4006ECP55 BS62LV4006ECP70 BS62LV4006EI BS62LV4006EI-55 BS62LV4006EI-70 BS62LV4006EIG55 BS62LV4006EIG70 BS62LV4006EIP55 BS62LV4006EIP70 BS62LV4006PC-55 BS62LV4006PC-70 BS62LV4006PCG55 BS62LV4006PCG70 BS62LV4006PCP55 BS62LV4006PCP70 BS62LV4006PI-70 BS62LV4006PIG55 BS62LV4006PIP55
Description    Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM

File Size 371.72K  /  10 Page  

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BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
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 Full text search :    Very Low Power/Voltage CMOS SRAM 512K X 8 bit Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) Asynchronous 4M(512Kx8) bits Static RAM


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